Double amorphous silicon-carbide p-layer structures producing highly stabilized pin-type protocrystalline silicon multilayer solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2126802
Reference19 articles.
1. Improvement ofpin-type amorphous silicon solar cell performance by employing double silicon-carbidep -layer structure
2. Highly conductive boron-doped nanocrystalline silicon-carbide film prepared by low-hydrogen-dilution photo-CVD method using ethylene as a carbon source
3. Electrical properties of photo-CVD boron-doped hydrogenated nanocrystalline silicon-carbide (p-nc-SiC:H) films for uncooled IR bolometer applications
4. Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique
5. Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique
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