Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform-Reference-Cited by-同舟云学术

Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

Published:2017-12 Issue:12 Volume:7 Page:125304
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chiba Kohei¹,Tomioka Katsuhiro¹,Yoshida Akinobu¹,Motohisa Junichi¹

Affiliation:

1. Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060-8628, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference19 articles.

1. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

2. Optical interconnection networks for high-performance computing systems

3. Demonstration of heterogeneous III–V/Si integration with a compact optical vertical interconnect access

4. A continuous-wave Raman silicon laser

5. Optical gain and stimulated emission in periodic nanopatterned crystalline silicon

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