Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon–germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367404
Reference17 articles.
1. A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technology
2. Ultra-shallow raised p+−n junctions formed by diffusion from selectively depositedIn-situ doped Si0.7Ge0.3
3. Polycrystalline silicon-germanium thin-film transistors
4. Deposition and Properties of Low‐Pressure Chemical‐Vapor Deposited Polycrystalline Silicon‐Germanium Films
5. Deposition and device application ofinsituboron‐doped polycrystalline SiGe films grown at low temperatures
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1. Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation;Scientific Reports;2019-10-04
2. Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering;Japanese Journal of Applied Physics;2017-11-13
3. Polycrystalline Silicon–Germanium Films Prepared by Aluminum-Induced Crystallization;Journal of The Electrochemical Society;2008
4. Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film;Journal of Applied Physics;2006-09
5. Effects of atomic hydrogen on the selective area growth of Si and Si[sub 1−x]Ge[sub x] thin films on Si and SiO[sub 2] surfaces: Inhibition, nucleation, and growth;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
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