Effects of annealing on the valence band offsets between hafnium aluminate and silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2982085
Reference32 articles.
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5. Control of Schottky Barrier Heights on High-KGate Dielectrics for Future Complementary Metal-Oxide Semiconductor Devices
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