Stacking fault reduction during annealing in Cu-poor CuInSe2 thin film solar cell absorbers analyzed by in situ XRD and grain growth modeling-Reference-Cited by-同舟云学术

Stacking fault reduction during annealing in Cu-poor CuInSe2 thin film solar cell absorbers analyzed by in situ XRD and grain growth modeling

Published:2019-01-21 Issue:3 Volume:125 Page:035303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Stange Helena¹^ORCID,Brunken Stephan²,Greiner Dieter²,Heinemann Marc Daniel²,Barragan Yani Daniel Antonio³,Wägele Leonard Alwin⁴,Li Chen⁵,Simsek Sanli Ekin⁵^ORCID,Kahnt Max⁶,Schmidt Sebastian Simon²,Bäcker Jan-Peter²,Kaufmann Christian Alexander²,Klaus Manuela²,Scheer Roland⁴,Genzel Christoph²,Mainz Roland²^ORCID

Affiliation:

1. Technische Universität Berlin, Institut für Werkstoffwissenschaften, Ernst-Reuter Platz 1, 10587 Berlin, Germany

2. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner Platz 1, 14109 Berlin, Germany

3. Technische Universität Darmstadt, FG Materialmodellierung, Jovanka-Bontschits-Str. 2, 64287 Darmstadt, Germany

4. Martin Luther Universität Halle-Wittenberg, Institut für Physik, von-Danckelmann Platz 3, 06120 Halle, Germany

5. Stuttgart Center for Electron Microscopy, Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany

6. Freie Universität Berlin, Numerische Analysis partieller Differentialgleichungen, Arnimallee 6, 14195 Berlin, Germany

Funder

European Metrology Researach Program

Helmholtz-Gesellschaft

Bundesministerium für Bildung und Forschung

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5052245

Reference50 articles.

1. First-principles study of deformation behavior and structural defects inCuInSe2andCu(In,Ga)Se2

2. The origins of twinning in cdTe

3. Energetics and electronic structure of stacking faults in ZnO

4. An HREM study of the defects in ZnS

5. Formation of parallel (111) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations

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