Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3688174
Reference14 articles.
1. Silicon Waveguide Integrated Germanium JFET Photodetector With Improved Speed Performance
2. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects
3. High-performance Ge-on-Si photodetectors
4. Silicon on insulator material technology
5. Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation
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