Electronic structure and magnetothermal property of H-VSe2 monolayer manipulated by carrier doping
Author:
Affiliation:
1. College of Physics, Sichuan University 1 , Chengdu 610064, China
2. National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP 2 , Mianyang 621900, China
Abstract
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Link
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0223854/20089154/054301_1_5.0223854.pdf
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