Modeling for Spin-FET and Design of Spin-FET-Based Logic Gates-Reference-Cited by-同舟云学术

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Modeling for Spin-FET and Design of Spin-FET-Based Logic Gates

Published:2017-11 Issue:11 Volume:53 Page:1-6
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Wang Gefei^ORCID,Wang Zhaohao^ORCID,Klein Jacques-Olivier,Zhao Weisheng^ORCID

Funder

China Scholarship Council

International Mobility Projects

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/20/8082142/07929380.pdf?arnumber=7929380

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure and magnetothermal property of H-VSe2 monolayer manipulated by carrier doping;Journal of Applied Physics;2024-08-01

2. Design of Spin-FET Electrical Model for Basic Gates;2024 IEEE 4th International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA);2024-05-17

3. Nanoribbon of Zigzag Silicene for Spin Field Effect Transistor with Low Voltage Bias;2024 IEEE International Magnetic Conference - Short papers (INTERMAG Short papers);2024-05-05

4. Revolutionizing Technology with Spintronics: Devices and Their Transformative Applications;Materials Science and Engineering: B;2024-05

5. Spin Field-Effect Transistor: For Steep Switching Behavior;Springer Tracts in Electrical and Electronics Engineering;2024

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