New technique to detect the GaAs semi‐insulating surface property—cw electro‐optic probing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97937
Reference6 articles.
1. New measurement technique: cw electro‐optic probing of electric fields
2. Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layer
3. The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits
4. Mechanism of surface conduction in semi‐insulating GaAs
5. Inhomogeneity of the deep center el2 in GaAs observed by direct infra-red imaging
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Visualized measurement of the electric field in large aperture LiNbO3 crystal by digital holographic interferometry;Chinese Optics Letters;2015
2. Slow domains in semi-insulating GaAs;Journal of Applied Physics;2001-07
3. Electrooptic imaging of surface electric fields in high-power photoconductive switches;IEEE Transactions on Electron Devices;1990-12
4. Study of Electric Field Distribution in GaAs Materials and Devices Using Electro‐Optic Probing Technique;Journal of The Electrochemical Society;1989-10-01
5. Electro‐optic voltage profiling of modulation‐doped GaAs/AlGaAs heterostructures;Applied Physics Letters;1989-05
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