Effects of rapid thermal anneal on refractive index and hydrogen content of plasma‐enhanced chemical vapor deposited silicon nitride films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363480
Reference18 articles.
1. PECVD grown silicon nitride AR coatings on polycrystalline silicon solar cells
2. On H Passivation of Si Donors in GaAs Annealed with Plasma‐ Enhanced Chemical Vapor Deposited Silicon Nitride Caps
3. High‐efficiency silicon solar cells by rapid thermal processing
4. Defect passivation in multicrystalline‐Si materials by plasma‐enhanced chemical vapor deposition of SiO2/SiN coatings
5. Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride
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