Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride-Reference-Cited by-同舟云学术

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Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride

Published:1989-11 Issue:6 Volume:20 Page:49-59
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Shams Q.A.,Brown W.D.

Publisher

Elsevier BV

Subject

General Engineering

Reference28 articles.

1. Properties of Plasma‐Deposited Silicon Nitride

2. Variation of Hydrogen Bonding, Depth Profiles, and Spin Density in Plasma‐Deposited Silicon Nitride and Oxynitride Film with Deposition Mechanism

3. High-temperature hydrogen anneal of mnos structures

4. The Physics of MOS Insulators;Stein,1980

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of rapid thermal anneal on refractive index and hydrogen content of plasma‐enhanced chemical vapor deposited silicon nitride films;Journal of Applied Physics;1996-11

2. Annealing Effects in Hydrogenated Silicon Nitride Films during High Energy Ion Beam Irradiation;Journal of The Electrochemical Society;1995-09-01

3. Bond density and physicochemical properties of a hydrogenated silicon nitride film;Journal of Physics and Chemistry of Solids;1995-02

4. The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition;Thin Solid Films;1991-09

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