Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature-Reference-Cited by-同舟云学术

Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

Published:2018-04-28 Issue:16 Volume:123 Page:161544
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tu Yi¹,Ruan Yujiao²,Zhu Lihong¹,Tu Qingzhen³,Wang Hongwei¹,Chen Jie⁴,Lu Yijun¹,Gao Yulin¹,Shih Tien-Mo⁵,Chen Zhong¹,Lin Yue¹

Affiliation:

1. Department of Electronic Science, Fujian Engineering Research Center for Solid-state Lighting, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen 361005, China

2. Xiamen Institute of Measurement and Testing, Xiamen, Fujian, People's Republic of China

3. Xiamen Dacol Photoelectronics Technology Co., Ltd. Xiamen, Fujian, People's Republic of China

4. Xiamen Hualian Electronics Co., Ltd. Xiamen, Fujian, People's Republic of China

5. Department of Physics, Xiamen University, Xiamen, Fujian 361005, People's Republic of China

Funder

NSF of Fujian Province

Science and technology project of Xiamen City

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4989595

Reference31 articles.

1. Efficiency droop in light-emitting diodes: Challenges and countermeasures

2. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

3. Auger recombination in InGaN measured by photoluminescence

4. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

5. Temperature-Dependent Electroluminescence Efficiency in Blue InGaN–GaN Light-Emitting Diodes With Different Well Widths

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