Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy

Published:2018-03-05 Issue:16 Volume:123 Page:161406
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Takatsu J.¹,Fuji R.¹,Tatebayashi J.¹,Timmerman D.²,Lesage A.²,Gregorkiewicz T.¹²^ORCID,Fujiwara Y.¹

Affiliation:

1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

2. Department Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands

Funder

MEXT | Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference24 articles.

1. Adobe Systems Inc., Adobe RGB (1998) Color Image Encoding ( Adobe Systems Inc., California, 2005).

2. ITU-R Recommendation BT.709-6 (2015).

3. ITU-R Recommendation BT.2020-2 (2015).

4. J. C. Dainty , Laser Speckle and Related Phenomena ( Springer Science+Business Media, Berlin, 2013).

5. Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region

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