Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength
Author:
Affiliation:
1. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Funder
Ozawa and Yoshikawa Memorial Electronics Research Foundation
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5140715
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