Impact ionization rate and high‐field transport in ZnS with nonlocal band structure-Reference-Cited by-同舟云学术

Impact ionization rate and high‐field transport in ZnS with nonlocal band structure

Published:1996-11 Issue:9 Volume:80 Page:5054-5060
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reigrotzki Martin,Redmer Ronald,Lee Insook,Pennathur Shankar S.,Dür Manfred,Wager John F.,Goodnick Stephen M.,Vogl Peter,Eckstein Harald,Schattke Wolfgang

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.363550

Reference24 articles.

1. Evidence for band‐to‐band impact ionization in evaporated ZnS:Mn alternating‐current thin‐film electroluminescent devices

2. Impact ionization rate in ZnS

3. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

4. Calculation of the Reflectivity, Modulated Reflectivity, and Band Structure of GaAs, GaP, ZnSe, and ZnS

5. Thresholds of impact ionization in semiconductors

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