Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap-Reference-Cited by-同舟云学术

Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap

Published:2015-11-16 Issue:20 Volume:107 Page:201103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kwon Junyeon¹,Hong Seongin¹,Hong Young Ki¹,Lee Sungho²,Yoo Geonwook²,Yoon Youngki³,Kim Sunkook¹

Affiliation:

1. Multi-Functional Nano/Bio Electronics Lab, Kyung Hee University, Yongin 446-701, South Korea

2. Display Convergence Research Center, Korea Electronics Technology Institute, Seongnam 463-816, South Korea

3. Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Funder

Start-Up Grant (University of Waterloo)

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935979

Reference14 articles.

1. The Computer for the 21st Century

2. Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

3. A highly sensitive and low-noise IR photosensor based on a-SiGe as a sensing and noise filter: Toward large-sized touch-screen LCD panels

4. Characteristics of a-SiGe:H Thin Film Transistor Infrared Photosensor for Touch Sensing Displays

5. Optical Properties of a-SiGe:H Thin Film Transistor for Infrared Image Sensors in Touch Sensing Display

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