Process dependence of AlAs/GaAs superlattice mixing induced by silicon implantation-Reference-Cited by-同舟云学术

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Process dependence of AlAs/GaAs superlattice mixing induced by silicon implantation

Published:1987-02-02 Issue:5 Volume:50 Page:281-283
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Schwarz S. A.,Venkatesan T.,Hwang D. M.,Yoon H. W.,Bhat R.,Arakawa Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98225

Reference13 articles.

1. IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity

2. Disorder of an AlAs‐GaAs superlattice by silicon implantation

3. Implantation disordering of AlxGa1−xAs superlattices

4. Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices

5. Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing

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