Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C60 and fabrication of logic gates-Reference-Cited by-同舟云学术

Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C60 and fabrication of logic gates

Published:2015-03-09 Issue:10 Volume:106 Page:103501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Steve¹,Nam Ji Hyun²,Koo Ja Hoon³,Lei Ting³,Bao Zhenan³

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, California 94305-4034, USA

2. Department of Electrical Engineering, Stanford University, David Packard Building, 350 Serra Mall, Mail Code: 9505, Stanford, California 94305-9505, USA

3. Department of Chemical Engineering, Stanford University, Shriram Center, 443 Via Ortega, Room 307, Stanford, California 94305-4145, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914476

Reference33 articles.

1. Extraordinary Mobility in Semiconducting Carbon Nanotubes

2. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

3. High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts

4. A review of fabrication and applications of carbon nanotube film-based flexible electronics

5. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

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