High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts-Reference-Cited by-同舟云学术

High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts

Published:2005-01-22 Issue:2 Volume:5 Page:345-348
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Javey Ali¹,Tu Ryan¹,Farmer Damon B.¹,Guo Jing¹,Gordon Roy G.¹,Dai Hongjie¹

Affiliation:

1. Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, Department of Chemistry and Chemical Biology, Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, and Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32608

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl047931j

Reference26 articles.

1. Ballistic carbon nanotube field-effect transistors

2. High Performance Electrolyte Gated Carbon Nanotube Transistors

3. High-κ dielectrics for advanced carbon-nanotube transistors and logic gates

4. Carbon Nanotubes as Schottky Barrier Transistors

5. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

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