Positron–electron autocorrelation function study of E-center in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1613368
Reference13 articles.
1. Diffraction pattern of a defect: Two-dimensional angular correlation of positron-annihilation radiation studies of defects in semiconductors
2. On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy
3. Structural information from directional compton profile measurements on Si and Ge
4. Fourier-Transformed Compton Profiles: A Sensitive Probe for the Microstructure of Semiconductors
5. The One-Dimensional Fourier Transform of Compton Profiles
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