Gummel–Poon model for Npn heterojunction bipolar phototransistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365677
Reference30 articles.
1. A high‐gain, high‐bandwidth In0.53Ga0.47As/InP heterojunction phototransistor for optical communications
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4. Temporal response characteristics of a In/sub 0.53/Ga/sub 0.47/As/InP quantum well phototransistor
5. InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxy
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