Study of Si-Ge-Sn based Heterobipolar Phototransistor (HPT) exploiting Quantum Confined Stark Effect and Franz Keldysh effect with and without resonant cavity-Reference-Cited by-同舟云学术

Study of Si-Ge-Sn based Heterobipolar Phototransistor (HPT) exploiting Quantum Confined Stark Effect and Franz Keldysh effect with and without resonant cavity

Published:2019-02 Issue: Volume:106 Page:62-67
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Ghosh Soumava,Mukhopadhyay Bratati,Sen Gopa,Basu P.K.

Funder

Indo-Taiwan Joint Research Program in Science and Technology

Junior Research Fellowship

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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