Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2400394
Reference12 articles.
1. <tex>$hbox Al_2hbox O_3$</tex>–Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates
2. Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si
3. Diffusion of silicon in crystalline germanium
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