High‐energy (λ≲7300 Å) 300 K operation of single‐ and multiple‐stripe quantum‐well heterostructure laser diodes in an external grating cavity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333985
Reference15 articles.
1. Tunable GaAs Laser in an External Dispersive Cavity
2. High‐power narrow‐linewidth operation of GaAs diode lasers
3. The gain profile and time-delay effects in external-cavity-controlled GaAs lasers
4. Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAszdouble heterojunctions in an external grating cavity
5. In1−xGaxP1−zAszdouble‐heterojunction‐laser operation (77 °K, yellow) in an external grating cavity
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1. Improving the Spatial and Temporal Coherence of High-Power Diode Lasers Using Four-Wave Mixing in the Gain Material;Photorefractive Effects, Materials, and Devices;2003
2. Gain-Guided Diode-Laser Oscillators;Monolithic Diode-Laser Arrays;1994
3. High‐power tunable operation of AlGaAs/GaAs quantum well lasers in an external grating cavity;Applied Physics Letters;1991-03-18
4. References;Thin Films by Chemical Vapour Deposition;1990
5. Broadband long‐wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers in an external grating cavity;Applied Physics Letters;1989-08-21
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