Analytic band-to-trap tunneling model including band offset for heterojunction devices
Author:
Affiliation:
1. Sandia National Laboratories, 1515 Eubank SE, Albuquerque, New Mexico 87123, USA
2. Mathematics Department, New Mexico Institute of Mining and Technology, Socorro, New Mexico 87801, USA
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5078685
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1. Statistics of the Recombinations of Holes and Electrons
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3. Excess Noise in Narrow Germanium p-n Junctions
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5. A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon
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