Interfacial properties of ZrO2 on silicon-Reference-Cited by-同舟云学术

Interfacial properties of ZrO2 on silicon

Published:2003-05-15 Issue:10 Volume:93 Page:5945-5952
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lin Y.-S.,Puthenkovilakam R.,Chang J. P.,Bouldin C.,Levin I.,Nguyen N. V.,Ehrstein J.,Sun Y.,Pianetta P.,Conard T.,Vandervorst W.,Venturo V.,Selbrede S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1563844

Reference58 articles.

1. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

2. Defect dominated charge transport in amorphous Ta2O5 thin films

3. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

4. Deposition and Treatment of TiO2 as an Alternative for Ultrathin Gate Dielectrics

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