Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques-Reference-Cited by-同舟云学术

Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques

Published:2004-03 Issue:5 Volume:95 Page:2495-2504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Onuma Takeyoshi,Chichibu Shigefusa F.,Uedono Akira,Sota Takayuki,Cantu Pablo,Katona Thomas M.,Keading John F.,Keller Stacia,Mishra Umesh K.,Nakamura Shuji,DenBaars Steven P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1644041

Reference67 articles.

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3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

4. Unusual properties of the fundamental band gap of InN

5. Optical bandgap energy of wurtzite InN

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