Thermoelectric and thermophysical properties of ErPdX (X=Sb and Bi) half-Heusler compounds
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2196109
Reference24 articles.
1. Transport properties of pure and dopedMNiSn (M=Zr, Hf)
2. Efficient dopants for ZrNiSn-based thermoelectric materials
3. Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds
4. Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys
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1. Thermoelectric properties of doped topological half-Heusler LuPdBi1-xZx (Z = P, As, Sb) compounds;Journal of Materials Science: Materials in Electronics;2024-04
2. Development of Thermoelectric Half-Heusler Alloys over the Past 25 Years;Crystals;2023-07-24
3. Narrow gap electronic structure and thermoelectric performance of p-type ErMSb (M = Ni, Pd) half Heusler compounds;Physica B: Condensed Matter;2022-04
4. Key properties of inorganic thermoelectric materials—tables (version 1);Journal of Physics: Energy;2022-03-22
5. Theoretical study of thermo-dynamical and thermoelectric properties of novel half-Heusler alloys AlNiAs and AlNiSb;Materials Today Communications;2021-06
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