Efficient dopants for ZrNiSn-based thermoelectric materials
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference19 articles.
1. New compounds with MgAgAs-type structure: NbIrSn and NbIrSb
2. Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf)
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