Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage-Reference-Cited by-同舟云学术

Schottky barrier impact-ionization metal-oxide-semiconductor device with reduced operating voltage

Published:2011-08-22 Issue:8 Volume:99 Page:083507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Qianqian,Huang Ru,Wang Zhenhua,Zhan Zhan,Wang Yangyuan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3624707

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