Investigation of the compensation mechanism in semi-insulating GaAs from alpha-spectra studies at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118981
Reference14 articles.
1. Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors
2. Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors
3. AsGa antisite defects in GaAs
4. Photoelectric memory effect in GaAs
5. Optical assessment of the main electron trap in bulk semi‐insulating GaAs
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1. Carrier compensation behaviors in Si-doped AlxGa1-xAs epilayers due to thermal annealing;Journal of Materials Science Letters;2002
2. Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al0.35Ga0.65As multiple quantum wells;Journal of Applied Physics;2001-06
3. Changes of MQW photoluminescence under alpha particle irradiation;Superlattices and Microstructures;2001-04
4. An exploration of the semi-insulating GaAs-based particle detector at temperatures below 300K;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-02
5. Transparent ZnO ohmic contact on semi-insulating GaAs;Solid-State Electronics;1999-11
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