Manipulation of strain state in silicon nanoribbons by top-down approach-Reference-Cited by-同舟云学术

Manipulation of strain state in silicon nanoribbons by top-down approach

Published:2015-04-27 Issue:17 Volume:106 Page:174102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mu Zhiqiang¹,Zhang Miao¹,Xue Zhongying¹,Sun Gaodi¹,Guo Qinglei¹,Chen Da¹,Huang Gaoshan²,Mei Yongfeng²,Chu Paul K.³^ORCID,Di Zengfeng¹,Wang Xi¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. Department of Materials Science, Fudan University, Shanghai 200433, China

3. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

Funder

National Natural Science Foundation of China (NSFC)

City University of Hong Kong (CityU)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919630

Reference25 articles.

1. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

2. Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)

3. Tensile-strained germanium microdisks

4. Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers

5. Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

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