Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2770833
Reference23 articles.
1. 1-eV solar cells with GaInNAs active layer
2. Multi-junction solar cells and novel structures for solar cell applications
3. Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN
4. Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
5. Nitrogen Solubility and Induced Defect Complexes in Epitaxial GaAs:N
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1. Determination of the acoustic phonon-hot carriers interaction in n- and p-type modulation-doped GaInNAs/GaAs quantum wells;Physica B: Condensed Matter;2021-07
2. Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers;Semiconductor Science and Technology;2020-10-06
3. Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs;Journal of Applied Physics;2019-10-14
4. Evaluation of concentrator photovoltaic properties of GaInNAsSb solar cells for multijunction solar cell applications;Japanese Journal of Applied Physics;2015-07-15
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