Heterostructures in GaInP grown using a change in V/III ratio-Reference-Cited by-同舟云学术

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Heterostructures in GaInP grown using a change in V/III ratio

Published:1997-06-15 Issue:12 Volume:81 Page:7778-7786
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chun Y. S.,Murata H.,Lee S. H.,Ho I. H.,Hsu T. C.,Stringfellow G. B.,Inglefield C. E.,DeLong M. C.,Taylor P. C.,Kim J. H.,Seong T.-Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.365387

Reference18 articles.

1. Control and characterization of ordering in GaInP

2. GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition

3. Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes

4. 29.5%‐efficient GaInP/GaAs tandem solar cells

5. Surface dimerization induced CuPtB versus CuPtA ordering of GaInP alloys

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of group II impurity and group III native defect on disordering Cu–Pt type ordered structures in In0.5(AlxGa1−x)0.5P layers;Journal of Applied Physics;2002-12

2. Isoelectronic surfactant-induced surface step structure and correlation with ordering in GaInP;Journal of Crystal Growth;2002-02

3. Effect of P precursor on surface structure and ordering in GaInP;Journal of Crystal Growth;1998-09

4. Surface photoabsorption transients and ordering in GaInP;Journal of Applied Physics;1998-03-15

5. Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio;Journal of Applied Physics;1997-11-15

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