Band gap and band offsets for ultrathin (HfO2)x(SiO2)1−x dielectric films on Si (100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2355453
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
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4. Electron trapping in noncrystalline remote plasma deposited Hf-aluminate alloys for gate dielectric applications
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