A sensitive double quantum well infrared phototransistor-Reference-Cited by-同舟云学术

A sensitive double quantum well infrared phototransistor

Published:2006-08-15 Issue:4 Volume:100 Page:044509
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

An Zhenghua,Ueda T.,Chen Jeng-Chung,Komiyama S.,Hirakawa K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2335686

Reference11 articles.

1. Quantum well photoconductors in infrared detector technology

2. Theory, fabrication and characterization of quantum well infrared photodetectors

3. H. C. Liu, Intersubband Transition in Quantum Wells: Physics and Device Applications I, Semiconductors and Semimetals Vol. 62 (Academic, New York, 2000), Chap. 3, pp. 126–196.

4. Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures

5. Detection of single photons using a field-effect transistor gated by a layer of quantum dots

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