Highly photoresponsive charge-sensitive infrared phototransistors with a dynamically controlled optical gate-Reference-Cited by-同舟云学术

Highly photoresponsive charge-sensitive infrared phototransistors with a dynamically controlled optical gate

Published:2016-08-29 Issue:9 Volume:109 Page:091102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Jie¹,Yang Le¹,Yu Haochi¹,Weng Qianchun²,Chen Pingping²,Zhang Bo²^ORCID,Kang Tingting²^ORCID,Komiyama Susumu³,Lu Wei²,An Zhenghua¹⁴

Affiliation:

1. State Key Laboratory of Surface Physics and Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Department of Physics, Fudan University, Shanghai 200433, China

2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

3. Department of Basic Science, The University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902, Japan

4. Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4961938

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