Highly selective etching for polysilicon and etch‐induced damage to gate oxide with halogen‐bearing electron‐cyclotron‐resonance plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363164
Reference24 articles.
1. Operational characteristics of SF6 etching in an electron cyclotron resonance plasma reactor
2. Effects of O 2 Feed Gas Impurity on Cl2 Based Plasma Etching of Polysilicon
3. Very High Selective n+poly-Si RIE with Carbon Elimination
4. Optimization of an electron cyclotron resonance plasma etch process for n+ polysilicon: HBr process chemistry
5. Role of Oxygen in Poly-Si Etching byCl2/O2Plasmas
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2. Effect on Etch Rate and Surface Roughness of Crystal Orientation of Polycrystalline Silicon Used for Consumable Parts of Reactive Ion Etching Equipment;ECS Journal of Solid State Science and Technology;2022-08-01
3. Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas;Journal of Vacuum Science & Technology A;2021-07
4. The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O2/He Plasmas for Thermopile Devices;Materials;2020-09-25
5. Dry Etching;Handbook of Visual Display Technology;2016
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