Application of deep level transient spectroscopy to metal‐oxide‐semiconductor relaxation transients
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339785
Reference8 articles.
1. On the determination of minority carrier lifetime from the transient response of an MOS capacitor
2. Minority carrier lifetime determination from inversion layer transient response
3. Rapid interpretation of the MOS-C C-t transient
4. Refinements in the measurement of depleted generation lifetime
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