Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107625
Reference16 articles.
1. Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy
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3. InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy
4. Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps
5. Er/sup 3+/-doped fiber amplifier pumped by 0.98 mu m laser diodes
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