A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its path
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346560
Reference7 articles.
1. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
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3. Dislocation nucleation near the critical thickness in GeSi/Si strained layers
4. Insituobservations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures
5. Relaxation of strained‐layer semiconductor structures via plastic flow
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