Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells-Reference-Cited by-同舟云学术

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Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells

Published:1995-01-09 Issue:2 Volume:66 Page:171-173
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Elhamri Said,Ahoujja M.,Ravindran K.,Mast D. B.,Newrock R. S.,Mitchel W. C.,Brown G. J.,Lo Ikai,Razeghi Manijeh,He Xiaguang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113553

Reference17 articles.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy;Thin Solid Films;2012-08

2. Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH[sub 3])[sub 3]Al/(CH[sub 3])[sub 3]Ga/AsH[sub 3];Journal of The Electrochemical Society;2000

3. Positive and negative persistent photoconductivity in a two-side-dopedIn0.53Ga0.47As/In0.52Al0.48Asquantum well;Physical Review B;1999-11-15

4. Characteristics of electron traps in Si-doped Ga0.51In0.49P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures;Thin Solid Films;1999-01

5. Enhancement of a rectifying characteristic of InGaP diodes by hydrogenation;Journal of Applied Physics;1999-01

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