Pressure sensors based on silicon doped GaAs–AlAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372282
Reference15 articles.
1. Piezoresistive pressure sensors based on polycrystalline silicon
2. Semiconductor Pressure Sensors as Seen by a Physicist
3. Characterization of a new device for pressure sensing: the AlGaAs/GaAs TEGFET
4. Deep donor levels (DXcenters) in III‐V semiconductors
5. Pressure-induced Hall-effect spectroscopy of siliconDXstates in planar doped GaAs-AlAs superlattices
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures;Journal of Low Temperature Physics;2016-01-06
2. Piezoresistive pressure sensing by porous silicon membrane;IEEE Sensors Journal;2006-04
3. GaAlAs-Based Micromachined Accelerometer;physica status solidi (b);2001-01
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