Sensitivity enhancement of AlGaAs∕InGaAs∕GaAs quantum well-based Hall device
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2335398
Reference16 articles.
1. High-performance Hall sensors based on III–V heterostructures
2. High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures
3. Nano-tesla magnetic field magnetometry using an InGaAs–AlGaAs–GaAs 2DEG Hall sensor
4. Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD
5. High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas;Semiconductors;2019-04
2. A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs;Semiconductor Physics Quantum Electronics and Optoelectronics;2012-03-29
3. InAs quantum well Hall devices for room-temperature detection of single magnetic biomolecular labels;Journal of Applied Physics;2007-08
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