A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs
Author:
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. High-performance Hall sensors based on III–V heterostructures
2. High sensitivity hall sensors with low thermal drift using AlGaAs/InGaAs/GaAs heterostructures
3. Nano-tesla magnetic field magnetometry using an InGaAs–AlGaAs–GaAs 2DEG Hall sensor
4. Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD
5. High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices
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