Defect distribution in a-plane GaN on Al2O3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2715128
Reference18 articles.
1. Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN
2. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
3. Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
4. Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
5. Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
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3. Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures;Physical Review Applied;2020-04-13
4. Influence of Growth Parameters on a‐Plane InGaN/GaN Heterostructures on r‐Sapphire;physica status solidi (b);2019-03-14
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