Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties-Reference-Cited by-同舟云学术

Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

Published:2014-11-17 Issue:20 Volume:105 Page:202101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Helen Hejin¹,Jayaraman Ashwin¹^ORCID,Heasley Rachel¹,Yang Chuanxi¹,Hartle Lauren¹,Mankad Ravin²^ORCID,Haight Richard²,Mitzi David B.²³,Gunawan Oki²,Gordon Roy G.¹

Affiliation:

1. Harvard University, Cambridge, Massachusetts 02138, USA

2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA

3. Duke University, Durham, North Carolina 27708, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4901899

Reference23 articles.

1. Experimental investigation of Cu(In1−x,Gax)Se2/Zn(O1−z,Sz) solar cell performance

2. 19·9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

3. Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4absorber

4. Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

5. Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3

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