Cd-free buffer layer materials on Cu2ZnSn(SxSe1−x)4: Band alignments with ZnO, ZnS, and In2S3
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4714737
Reference19 articles.
1. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%
2. Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell
3. Band alignment at the Cu2ZnSn(SxSe1−x)4/CdS interface
4. Structural and optical studies on thermal-annealed In2S3 films prepared by the chemical bath deposition technique
5. A Cadmium-Free Cu2ZnSnS4/ZnO Hetrojunction Solar Cell Prepared by Practicable Processes
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