Capacitance–voltage characteristics of Bi4Ti3O12/p-Si interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121184
Reference8 articles.
1. TdI18: Process integration of the ferroelectric memory FETs (FEMFETs) for ndro ferram
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3. A Preliminary Experimental Study on Dielectric Properties of Metal/(Pb,La)(Ti,Zr)O3/Semiconductive Perovskite Heterostructures
4. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
5. Preparation and properties of Bi4Ti3O12 single‐crystal thin films by atmospheric pressure metalorganic chemical vapor deposition
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