TdI18: Process integration of the ferroelectric memory FETs (FEMFETs) for ndro ferram

Author:

Lampe D. R.,Adams D. A.,Austin M.,Polinsky M.,Dzimianski J.,Sinharoy S.,Buhay H.,Brabant P.,Liu Y. M.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors

2. Sinharoy, S., Buhay, H., Lampe, D. R. and Francombe, M. H. 1992. BaMgF4Thin Film Development and Processing for Ferroelectric FETs Proceedings of the Fourth International Symposium on Integrated Ferroelectrics. March1992. Monterey, Calif. to be published

3. Buhay, H., Sinharoy, S., Lampe, D. R., Adams, D. A. and Francombe, M. H. 1992. Large-Area Pulsed Laser Deposition (PLD) & Integration of Ferroelectric Bismuth Titanate Thin Films for FEMFET Applications Fourth International Symposium on Integrated Ferroelectrics. March1992. Monterey, Calif.

4. Francombe, M. H., Sinharoy, S. and Buhay, H. 1992. Influence of Orientation Effects on Polarization Switching in Bismuth Titanate and Barium Magnesium Fluoride Films Fourth International Symposium on Integrated Ferroelectrics. March1992. Monterey, Calif.

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